| PART |
Description |
Maker |
| CDP1823 CDP1823CD CDP1823CDX CDP1823CE CDP1823D CD |
128-Word x 8-Bit LSI Static RAM
From old datasheet system
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| CMM5104 FN3406 |
Radiation Hardened, High Reliability, CMOS/SOS 4096 Word by 1-Bit LSI Static RAM
From old datasheet system
|
Intersil
|
| MSM521218 |
65,536-Word ?18-Bit CMOS STATIC RAM(64k瀛??8浣????AM)
65,536-Word x 18-Bit CMOS STATIC RAM
From old datasheet system
65,536-Word ×18-Bit CMOS STATIC RAM(64k字8位静态RAM) 65,536字18位的CMOS静态RAM4K的字× 18位静态RAM）的
|
OKI SEMICONDUCTOR CO., LTD.
|
| HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM
262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
|
| MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X M |
1024-Word x 4-Bit LSI Static RAM 1K X 4 STANDARD SRAM, 250 ns, PDIP18
6 OUTLET PWR STRIP FOR 5 1K X 4 STANDARD SRAM, 300 ns, CDIP18
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit DDR-II SRAM 2-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Fuse
256K (32K x 8) Static RAM
64/256/512/1K/2K/4K x 18 Synchronous FIFOs
Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
Neuron® Chip Network Processor
64-Kbit (8K x 8) Static RAM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
| 24C44 CAT24C44 CAT24C44SITE13 CAT24C44PITE13 CAT24 |
256-Bit Serial Nonvolatile CMOS Static RAM
256-BitSerialNonvolatileCMOSStaticRAM
|
CATALYST[Catalyst Semiconductor]
CatalystSemiconductor
|
| TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位（65536字由16位）的CMOS静态RAM
From old datasheet system
1048576-1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| AM42DL3244GB25IT AM42DL3234GB25IT AM42DL3224GB25IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
|
Advanced Micro Devices, Inc.
|
